參數(shù)資料
型號(hào): BA277
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Band-switching diode
中文描述: 波段開(kāi)關(guān)二極管
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 52K
代理商: BA277
2002 Oct 29
2
Philips Semiconductors
Product specification
Band-switching diode
BA277-01
FEATURES
Small plastic SMD package
Continuous reverse voltage: max. 35 V
Continuous forward current: max. 100 mA
Low diode capacitance: max. 1.2 pF
Low diode forward resistance: max. 0.7
.
APPLICATIONS
Low loss band switching in VHF television tuners
Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
SOD723 SMD plastic package.
PINNING
PIN
DESCRIPTION
1
2
cathode
anode
Fig.1
Simplified outline (SOD723) and symbol.
Marking code:
M2.
handbook, halfpage
1
2
Top view
MAM399
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
65
65
35
100
315
+150
+150
V
mA
mW
°
C
°
C
T
s
= 90
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
I
R
forward voltage
reverse current
I
F
= 10 mA
V
R
= 25 V
V
R
= 20 V; T
amb
= 75
°
C
f = 1 MHz; V
R
= 6 V; see Fig.2
I
F
= 2 mA; f = 100 MHz; note 1; see Fig.3
1
50
1
1.2
0.7
V
nA
μ
A
pF
C
d
r
D
diode capacitance
diode forward resistance
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering-point
190
K/W
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BA277-01 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Band-switching diode