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參數(shù)資料
| 型號： | BA1283-TR3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Band Switching Diodes |
| 中文描述： | 波段開關(guān)二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 138K |
| 代理商： | BA1283-TR3 |
www.vishay.com
2
Document Number 85525
Rev. 1.8, 07-Mar-06
BA1282 / BA1283
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Test condition
Symbol
R
thJA
Value
500
Unit
K/W
mounted on epoxy-glass hard
tissue, Fig. 1
35
μ
m copper clad, 0.9 mm
2
copper area per electrode
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
- 55 to + 150
°C
Test condition
Part
Symbol
V
F
I
R
C
D
C
D
C
D
r
f
r
f
r
f
r
f
Min
Typ.
Max
1000
Unit
mV
I
F
= 100 mA
V
R
= 20 V
f = 100 MHz, V
R
= 1 V
f = 100 MHz, V
R
= 3 V
Reverse current
50
nA
Diode capacitance
1.5
pF
BA1282
1.25
pF
BA1283
1.2
pF
Ω
Ω
Ω
Ω
Differential forward resistance
f = 200 MHz, I
F
= 3 mA
BA1282
0.7
BA1283
1.2
f = 200 MHz, I
F
= 10 mA
BA1282
0.5
BA1283
0.9
Figure 1. Differential Forward Resistance vs. Forward Current
0.1
1
10
0.1
1
10
100
r
w
a
Ω
)
f
I
F
- For
w
ard C
u
rrent (mA)
100
94 9076
BA 12
8
2
BA 12
8
3
f = 200 MHz
T
j
= 25 °C
Figure 2. Diode Capacitance vs. Reverse Voltage
1
0.1
0
0.5
1.0
1.5
2.0
3.0
C
D
100
10
94 9077
2.5
V
- Re
v
erse
V
oltage (
V
)
R
T
f = 200 MHz
= 25 °C
j
BA 12
8
3
BA 12
8
2
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