參數(shù)資料
型號(hào)： AWT921S11
廠商： ANADIGICS INC
元件分類： 衰減器
英文描述： Integrated High Power Amp 900 MHz
中文描述： 925 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： S11, SSOP-28
文件頁數(shù)： 6/12頁
文件大?。?/td> 613K
代理商： AWT921S11
6
Data Sheet - Rev 2.0
09/2003
AWT921
Figure 9: Small Signal Gain, Saturated Power,
and Efficiency vs. Temperature
28
30
32
34
36
38
40
-30 -20
-10
0
10
20
30
40
50
60
70
80
90
Temperature (C)
P
0
10
20
30
40
50
60
P
Pout
SS Gain
PAE
Figure 10: Third Stage Quiescent Current,
Reference Current vs. Temperature
450
0
50
100
150
200
250
300
350
400
-30 -20 -10
0
10
20
30
40
50
60
70
80
90
Temperature (C)
I
0
0.5
1
1.5
2
2.5
3
I
Iq3
Iref
Figure 11: Test Circuit Impedance Presented to
the First Stage Drain (Vd1)
S11 FORWARD REFLECTION
IMPEDANCE
MARKER 1
0.926500000 GHz
8.126
114.075 j
MARKER TO MAX
MARKER TO MIN
MARKER READOUT
FUNCTIONS
0
.2
.5
1
2
5
.2
-.2
.5
-.5
1
-1
2
-2
5
-5
0.100000000 -
2.000000000 GHz
CH 1S11
REFERENCE PLANE
16.2900 cm
0.959750000 GHz
9.834
126.385 j
2
1
2
Figure 12: Test Circuit Impedance Presented to
the Second Stage Drain (Vd2)
MARKER 1
0.926500000 GHz
16.486
181.822 j
MARKER TO MAX
MARKER TO MIN
MARKER READOUT
FUNCTIONS
0
.2
.5
1
2
5
.2
-.2
.5
-.5
1
-1
2
-2
5
-5
0.100000000 -
2.000000000 GHz
S11 FORWARD REFLECTION
IMPEDANCE
CH 1S11
REFERENCE PLANE
16.2900 cm
0.959750000 GHz
19.628
205.440 j
2
12
Figure 13: Test Circuit Impedance Presented to
the Third Stage Drain (Vd3)
S11 FORWARD REFLECTION
IMPEDANCE
MARKER 1
0.926500000 GHz
3.233
-1.131 j
MARKER TO MAX
MARKER TO MIN
MARKER READOUT
FUNCTIONS
0
.2
.5
1
2
5
.2
-.2
.5
-.5
1
-1
2
-2
5
-5
0.100000000 -
2.000000000 GHz
CH 1S11
REFERENCE PLANE
16.2900 cm
0.959750000 GHz
3.045
-344.163 jm
2
1
2
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