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參數(shù)資料
| 型號： | AWT6252M7P8 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 衰減器 |
| 英文描述： | IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module |
| 中文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, MINIATURE, M7, 10 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 152K |
| 代理商： | AWT6252M7P8 |
03/2004
AWT6252
IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
M7 Package
10 Pin 4 x 4 x 1.5 mm
Surface Mount Module
Figure 1: Block Diagram
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 x 4 x 1.5 mm surface
mount package incorporates matching networks
optimized for output power, efficiency, and linearity in a
50
system.
FEATURES
InGaP HBT Technology
High Efficiency: 39%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
μ
A
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
APPLICATIONS
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6252 meets the increasing demands for
higher output power in 3GPP 1XRTT handsets. The PA
module is optimized for V
REF
= +2.85 V, a requirement
for compatibility with the Qualcomm 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
AT22
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
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| AWT6270 | HELP 830-840 MHz WCDMA 3.4V/27dBm Linear Power Amplifier Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AWT6252RM7P8 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ANADIGICS Inc 功能描述: |
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| AWT6260RM20P9 | 制造商:ANADIGICS Inc 功能描述: |
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