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參數(shù)資料
| 型號(hào)： | AWT6167R |
| 廠商： | ANADIGICS, Inc. |
| 英文描述： | GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control |
| 中文描述： | GSM900/DCS雙頻功率放大器模塊，集成了功率控制 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 291K |
| 代理商： | AWT6167R |
PRELIMINARY DATA SHEET - Rev 1.0
06/2005
AWT6167R
3
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500
,
capacitance = 100 pF.
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
N
U
V
(
e
g
a
V
y
p
u
S
T
T
A
B
)
-
7
+
V
F
R
(
r
w
o
P
t
p
n
F
R
N
I
)
-
1
1
m
B
d
V
(
s
e
g
a
V
l
o
C
P
M
A
R
)
3
8
V
T
(
e
p
m
e
T
e
g
a
S
G
T
S
)
5
5
-
0
5
1
C
°
Table 5: Control Logic Table
Table 4: Digital Inputs
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
N
U
)
p
F
R
(
e
g
a
v
d
h
s
e
T
D
S
E
M
B
H
5
>
V
k
)
p
n
o
c
e
g
a
v
d
h
s
e
T
D
S
E
M
B
H
5
>
V
k
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
N
U
V
(
e
g
a
V
h
g
H
c
o
L
H
I
)
2
-
0
V
V
(
e
g
a
V
w
o
L
c
o
L
L
)
-
-
5
V
I
e
C
h
g
H
c
o
L
H
I
)
-
-
0
3
A
μ
I
e
C
w
o
L
c
o
L
L
)
-
-
0
3
A
μ
E
D
O
M
N
E
_
x
T
S
B
e
a
n
E
A
P
H
G
I
H
X
e
d
o
M
0
0
9
M
S
G
H
G
I
H
W
O
L
e
d
o
M
S
C
D
H
G
I
H
H
G
I
H
e
a
s
D
A
P
W
O
L
X
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