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參數(shù)資料
| 型號(hào)： | AWT6134 |
| 廠商： | ANADIGICS, Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module |
| 中文描述： | 金伯利/碼分多址3.4V/28dBm線性功率放大器模塊 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | AWT6134 |
07/2003
AWT6134
KPCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4mm x 4mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency: 39%
Low Quiescent Current: 48 mA
Low Leakage Current in Shutdown Mode: <1
μ
A
V
REF
= +2.8 V (+2.7 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
Korean PCS CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6134 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for V
REF
= +2.8 V,
a requirement for compatibility with the Qualcomm
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
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| AWT6134M7P8 | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module |
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