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參數(shù)資料
| 型號(hào)： | AVT-55689-TR1G |
| 元件分類： | 放大器 |
| 英文描述： | 50 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | GREEN, PLASTIC, SOT-89, 3 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 186K |
| 代理商： | AVT-55689-TR1G |
2
Absolute Maximum Rating (1) TA = 25° C
Symbol
Parameter
Units
Absolute Max.
Vd, MAX
Device Voltage
V
5.5
PIN, MAX
CW RF Input Power
dBm
18
PDISS
Total Power Dissipation (2)
mW
550
TOPT
Operating Temperature
°C
-40 to 85
TJ, MAX
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance
Thermal Resistance (3)
θJB = 111° C/W
(Id = 75 mA, Tb = 85° C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Ground lead temperature is 25° C. Derate 8.9
mW/° C for Tc>108° C.
3. Thermal resistance measured using Infrared
measurement technique.
Electrical Specication (1)
TA = 25° C, Zo = 50
Ω, VCC = 5 V, Pin = -15 dBm (unless specied otherwise)
Symbol
Parameter and Test Condition
Frequency
Units
Min.
Typ.
Max.
Id
Device Current
mA
66
75
86
Gp
Power Gain
900 MHz
2000 MHz
dB
15.5
18.8
17.2
18.5
f3dB
3 dB Bandwidth
GHz
2.5
OIP3 (2)
Output 3rd Intercept Point
900 MHz
2000 MHz
dBm
30
35
32.5
S11
Input Return Loss, 50
Ω source
900 MHz
2000 MHz
dB
-27
-19
S22
Output Return Loss, 50
Ω load
900 MHz
2000 MHz
dB
-14
-10.7
S12
Reverse Isolation
900 MHz
2000 MHz
dB
-22.6
-22.7
P1dB
Output Power at 1 dB Gain Compression
900 MHz
2000 MHz
dBm
20.6
19.5
NF
Noise Figure
900 MHz
2000 MHz
dB
4.1
4.3
Note :
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: FRF1 - FRF2 = 10 MHz with input power of -15 dBm per tone measured at worse side band.
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