參數(shù)資料
| 型號： | ATSAM3N1BA-MU |
| 廠商： | Atmel |
| 文件頁數(shù)： | 19/60頁 |
| 文件大?。?/td> | 0K |
| 描述： | MCU FLASH 64-QFN |
| 產品培訓模塊： | Touch Solutions on the Atmel ARM? Cortex?-M3 Based Flash Microcontrollers |
| 特色產品： | SAM3N Flash MCU |
| 標準包裝： | 260 |
| 系列： | SAM3N |
| 核心處理器： | ARM? Cortex?-M3 |
| 芯體尺寸： | 32-位 |
| 速度： | 48MHz |
| 連通性： | I²C，IrDA，SPI，UART/USART |
| 外圍設備： | 欠壓檢測/復位，DMA，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 47 |
| 程序存儲器容量： | 64KB（64K x 8） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 8K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 1.62 V ~ 3.6 V |
| 數(shù)據轉換器： | A/D 10x10b，D/A 1x10b |
| 振蕩器型： | 內部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 64-VFQFN 裸露焊盤 |
| 包裝： | * |
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26
11011BS–ATARM–22-Feb-12
SAM3N Summary
6.3
Test Pin
The TST pin is used for JTAG Boundary Scan Manufacturing Test or Fast Flash programming
mode of the SAM3N series. The TST pin integrates a permanent pull-down resistor of about 15
k
Ω to GND, so that it can be left unconnected for normal operations. To enter fast programming
mode, see the Fast Flash Programming Interface (FFPI) section. For more on the manufacturing
and test mode, refer to the “Debug and Test” section of the product datasheet.
6.4
NRST Pin
The NRST pin is bidirectional. It is handled by the on-chip reset controller and can be driven low
to provide a reset signal to the external components or asserted low externally to reset the
microcontroller. It will reset the Core and the peripherals except the Backup region (RTC, RTT
and Supply Controller). There is no constraint on the length of the reset pulse and the reset con-
troller can guarantee a minimum pulse length. The NRST pin integrates a permanent pull-up
resistor to VDDIO of about 100 k
Ω . By default, the NRST pin is configured as an input.
6.5
ERASE Pin
The ERASE pin is used to reinitialize the Flash content (and some of its NVM bits) to an erased
state (all bits read as logic level 1). It integrates a pull-down resistor of about 100 k
Ω to GND, so
that it can be left unconnected for normal operations.
This pin is debounced by SCLK to improve the glitch tolerance. When the ERASE pin is tied high
during less than 100 ms, it is not taken into account. The pin must be tied high during more than
220 ms to perform a Flash erase operation.
The ERASE pin is a system I/O pin and can be used as a standard I/O. At startup, the ERASE
pin is not configured as a PIO pin. If the ERASE pin is used as a standard I/O, startup level of
this pin must be low to prevent unwanted erasing. Please refer to Section 11.2 “Peripheral Sig-
nals Multiplexing on I/O Lines” on page 42. Also, if the ERASE pin is used as a standard I/O
output, asserting the pin to low does not erase the Flash.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATSAM3N1BB-AU | 功能描述:ARM微控制器 - MCU LQFP, Grn, IT, MRL B RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據 RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT |
| ATSAM3N1BB-AUR | 制造商:Atmel Corporation 功能描述:. - LQFP,GREEN,IND TEMP,MRL B,T&R - Tape and Reel 制造商:Atmel Corporation 功能描述:IC MCU 32BIT 64KB FLASH 64LQFP |
| ATSAM3N1BB-MU | 功能描述:ARM微控制器 - MCU QFN,Grn, IT, MRL B RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據 RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT |
| ATSAM3N1BB-MUR | 制造商:Atmel Corporation 功能描述:. - QFN,GREEN,IND TEMP,MRL B,T&R - Tape and Reel 制造商:Atmel Corporation 功能描述:IC MCU 32BIT 64KB FLASH 64QFN |
| ATSAM3N1CA-AU | 功能描述:ARM微控制器 - MCU IND TEMP MRLA RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據 RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT |
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