參數(shù)資料
型號： AT91SAM9XE512-QU
廠商： Atmel
文件頁數(shù)： 130/159頁
文件大小： 0K
描述： MCU ARM9 512K FLASH 208-PQFP
產(chǎn)品培訓(xùn)模塊： MCU Product Line Introduction
標(biāo)準(zhǔn)包裝： 24
系列： SAM9XE
核心處理器： ARM9
芯體尺寸： 16/32-位
速度： 180MHz
連通性： EBI/EMI，以太網(wǎng)，I²C，MMC，SPI，SSC，UART/USART，USB
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 96
程序存儲器容量： 512KB（512K x 8）
程序存儲器類型： 閃存
RAM 容量： 56K x 8
電壓 - 電源 (Vcc/Vdd)： 1.65 V ~ 1.95 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 4x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 208-MQFP，208-PQFP
包裝： 托盤
配用： AT91SAM9XE-EK-ND - KIT EVAL FOR AT91SAM9XE
AT91SAM-ICE-ND - EMULATOR FOR AT91 ARM7/ARM9
PIC16F5X
DS41213D-page 60
2007 Microchip Technology Inc.
11.1
DC Characteristics: PIC16F5X (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C
≤ TA ≤ +85°C for industrial
Param
No.
Sym.
Characteristic/Device
Min. Typ Max. Units
Conditions
D001
VDD
Supply Voltage
2.0
—
5.5
V
D002
VDR
RAM Data Retention Voltage(1)
—
1.5*
—
V
Device in Sleep mode
D003
VPOR VDD Start Voltage to ensure
Power-on Reset
—
Vss
—
V
(POR)” for details on Power-on Reset
D004
SVDD VDD Rise Rate to ensure
Power-on Reset
0.05*
—
(POR)” for details on Power-on Reset
D010
IDD
Supply Current(2)
—
170
0.4
1.7
15
350
1.0
5.0
22.5
μA
mA
μA
FOSC = 4 MHz, VDD = 2.0V, XT or RC
mode(3)
FOSC = 10 MHz, VDD = 3.0V, HS mode
FOSC = 20 MHz, VDD = 5.0V, HS mode
FOSC = 32 kHz, VDD = 2.0V, LP mode,
WDT disabled
D020
IPD
Power-down Current(2)
—
1.0
0.5
6.0
2.5
μA
VDD = 2.0V, WDT enabled
VDD = 2.0V, WDT disabled
*
These parameters are characterized but not tested.
Data in “Typ” column is based on characterization results at 25
°C. This data is for design guidance only and
is not tested.
Note 1:
This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature, also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/
disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
mode. The Power-down Current in Sleep mode does not depend on the oscillator type.
3:
Does not include current through REXT. The current through the resistor can be estimated by the formula:
IR =VDD/2REXT (mA) with REXT in k
Ω.
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