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參數(shù)資料
| 型號(hào)： | ASISD1006 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 36K |
| 代理商： | ASISD1006 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CBO
I
C
= 100
μ
A
BV
EBO
I
E
= 100
μ
A
I
CEO
V
CE
= 28 V
h
FE
V
CE
= 15 V I
C
= 50 mA
f
t
V
CE
= 15 V I
C
= 50 mA
C
ob
V
CB
= 30 V
C
ib
V
EB
= 0.5 V
NF
NB
V
CE
= 10 V
NF
BB
V
CE
= 15 V
G
VE
V
CE
= 15 V I
C
= 50 mA f = 216 MHz
X
MOD
V
CE
= 15 V I
C
= 50 mA P
out
= +45 dbmV
2
NDO
V
CE
= 15 V I
C
= 50 mA P
out
= +45 dbmV
NONE
TEST CONDITIONS
MINIMUM
30
50
5.0
30
1500
TYPICAL
1800
2.5
8.0
2.7
7.0
7.2
-60
-60
MAXIMUM
100
300
3.5
10
8.0
6.8
-57
-50
UNITS
V
V
V
μ
A
---
MHz
pF
pF
dB
dB
dB
dB
dB
I
C
= 10 mA f = 2000 MHz
I
C
= 50 mA f = 216 MHz
f = 100 KHz
f = 100 KHz
NPN SILICON HIGH FREQUENCY TRANSISTOR
SD1006
DESCRIPTION:
The
ASI SD1006
is a High Frequency
Transistor for General Purpose
Amplifier Applications
.
MAXIMUM RATINGS
I
C
400 mA
V
CEO
30 V
V
CBO
50 V
P
DISS
3.5 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
50 °C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
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