參數(shù)資料
型號： ASIBLY91A
廠商： Advanced Semiconductor, Inc.
英文描述： NPN SILICON POWER TRANSISTOR
中文描述： NPN硅功率晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 14K
代理商： ASIBLY91A
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 10 mA
BV
CBO
I
C
= 1.0 mA
BV
EBO
I
E
= 1.0 mA
I
CEO
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
65
V
4.0
V
5.0
mA
5.0
---
C
ob
f
t
V
CB
= 30 V
V
CE
= 20V
f = 1.0 MHz
10
15
pF
I
C
= 400 mA f = 500 MHz
500
MHz
G
P
P
L
η
V
CC
= 28 V
I
C
=
≤
0.4 A f = 175 MHz
12
8.0
65
dB
W
%
NPN SILICON POWER TRANSISTOR
BLY91A
DESCRIPTION:
The
ASI BLY91A
is Designed for
28 V Class A, B and C Transmitter
Applications.
MAXIMUM RATINGS
I
C
750 mA
2.25 A
(PEAK)
f =
≥
1.0 MHz
V
CE
36 V
V
CB
65 V
P
DISS
17.5 W @ T
mb
= 25
O
C
-30
O
C to +200
O
C
-30
O
C to +200
O
C
9.4
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE SOT- 48 TYPE
ALL DIMENSIONS IN INCHES
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
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