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參數(shù)資料
| 型號： | ASI10659 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | ASI10659 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CER
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CB
= 50 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
60
35
4.0
20
UNITS
V
V
V
V
mA
---
R
BE
= 10
5.0
120
C
OB
V
CB
= 30 V
f = 1.0 MHz
85
pF
P
G
IMD
3
V
CE
= 25 V
P
OUT
= 14 W
I
C
= 2.5 A f = 225 MHz
8.0
-51
dB
dBc
NPN SILICON RF POWER TRANSISTOR
TVV020
DESCRIPTION:
The
ASI TVV020
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
8.0 A
V
CEO
35 V
V
CES
60 V
V
EBO
4.0 V
P
DISS
140 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
1.5
O
C/W
PACKAGE STYLE .500 4L STUD
ORDER CODE: ASI10659
MINIMUM
inches / mm
.003 / 0.08
.495 / 12.57
.160 / 4.06
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.505 / 12.83
.007 / 0.18
.180 / 4.57
.415 / 10.54
.425 / 10.80
DIM
1.010 / 25.65
.220 / 5.59
1.050 / 26.67
.230 / 5.84
.130 / 3.31
.100 / 2.54
I
J
.250 / 6.35
.290 / 7.37
G
D
F
E
C
H
#10-32 UNF
I
J
B
45°
A
SEATING
.622 / 15.80
.720 / 18.29
S
S
D
G
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