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參數(shù)資料
| 型號(hào)： | AS29LV800 |
| 廠商： | ANADIGICS, Inc. |
| 英文描述： | 3V 1M】8/512K】16 CMOS Flash EEPROM |
| 中文描述： | 3V的100萬】8/512K】16個(gè)CMOS閃存EEPROM |
| 文件頁數(shù)： | 9/24頁 |
| 文件大小： | 416K |
| 代理商： | AS29LV800 |
AS29LV800
October 2000
DID 11-40002-A. 10/19/00
ALLIANCE SEMICONDUCTOR
9
Erase Suspend
Erase Suspend allows interruption of sector erase operations to read data from or program data to
a sector not being erased. Erase suspend applies only during sector erase operations, including
the time-out period. Writing an Erase Suspend command during sector erase time-out results in
immediate termination of the time-out period and suspension of erase operation.
AS29LV800 ignores any commands during erase suspend other than Read/Reset, Program or
Erase Resume commands. Writing the Erase Resume Command continues erase operations.
Addresses are Don’t Care when writing Erase Suspend or Erase Resume commands.
AS29LV800 takes 0.2–15 μs to suspend erase operations after receiving Erase Suspend
command. To determine completion of erase suspend, either check DQ6 after selecting an
address of a sector not being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to
determine if a sector is being erased. AS29LV800 ignores redundant writes of Erase Suspend.
While in erase-suspend mode, AS29LV800 allows reading data (erase-suspend-read mode) from
or programming data (erase-suspend-program mode) to any sector not undergoing sector erase;
these operations are treated as standard read or standard programming mode. AS29LV800
defaults to erase-suspend-read mode while an erase operation has been suspended.
Write the Resume command 30h to continue operation of sector erase. AS29LV800 ignores
redundant writes of the Resume command. AS29LV800 permits multiple suspend/resume
operations during sector erase.
Sector Protect
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are
activated for about <1 μs. When attempting to erase a protected sector, DATA polling and
Toggle Bit 1 (DQ6) are activated for about <5 μs. In both cases, the device returns to read mode
without altering the specified sectors.
Ready/Busy
RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or
completed (RY/BY = high). The device does not accept Program/Erase commands when
RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY = high when device
exceeds time limit, indicating that a program or erase operation has failed. RY/BY is an open
drain output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to V
CC
.
Item
Description
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| AS29LV800B-120SC | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:3V 1M】8/512K】16 CMOS Flash EEPROM |
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| AS29LV800B-70RSC | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:3V 1M】8/512K】16 CMOS Flash EEPROM |
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