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參數(shù)資料
| 型號(hào)： | APTM50UM09F-ALN |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 497 A, 500 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 298K |
| 代理商： | APTM50UM09F-ALN |
APTM50UM09F-AlN
A
P
T
M
50U
M
09F
-A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
30
50
70
90
110
100 200 300 400 500 600 700 800
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
o
ff
)(n
s
)
VDS=333V
RG=0.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
40
80
120
160
100 200 300 400 500 600 700 800
ID, Drain Current (A)
t r
a
nd
t f(n
s
)
VDS=333V
RG=0.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
3
6
9
12
15
18
100 200 300 400 500 600 700 800
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=0.5
TJ=125°C
L=100H
Eon
Eoff
6
10
14
18
22
26
30
34
38
01
23
45
67
89
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=497A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
50 100 150 200 250 300 350 400 450
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=0.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
10000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
e
n
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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