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參數(shù)資料
| 型號： | APTM50SKM19 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 288K |
| 代理商： | APTM50SKM19 |
APTM50SKM19
A
PT
M
50S
K
M
19
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R
ev
2
A
pr
il
,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 81.5A
19
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
22.4
Coss
Output Capacitance
4.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
492
Qgs
Gate – Source Charge
132
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 163A
260
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 163A
RG = 1
W
77
ns
Eon
Turn-on Switching Energy
u
3020
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
2904
J
Eon
Turn-on Switching Energy
u
4964
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
3384
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
120
A
IF = 120A
1.6
1.8
IF = 240A
1.9
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
IF = 120A
VR = 400V
di/dt = 400A/s
Tj = 125°C
170
ns
Tj = 25°C
440
Qrr
Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt = 400A/s
Tj = 125°C
1840
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
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PDF描述 |
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| APTM50SKM19 | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APTM50SKM38T | 90 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50SKM19G | 功能描述:MOSFET N-CH 500V 163A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM50SKM35T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper MOSFET Power Module |
| APTM50SKM35TG | 功能描述:MOSFET N-CH 500V 99A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM50SKM38T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper MOSFET Power Module |
| APTM50SKM38TG | 功能描述:MOSFET N-CH 500V 90A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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