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參數(shù)資料
| 型號： | APTM50H15UT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 143K |
| 代理商： | APTM50H15UT1G |
APTM50H15UT1G
APT
M
50H15UT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
4 – 5
Typical Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VGS=10V
Low Voltage Output Characteristics
5.5V
6V
6.5V
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VGS=7 &10V
TJ=125°C
Normalized RDSon vs. Temperature
0.5
1
1.5
2
2.5
25
50
75
100
125
150
TJ, Junction Temperature (°C)
VGS=10V
ID=21A
R
DS
on,
D
rai
n
to
So
u
rce
ON
resi
stan
c
e
Ciss
Crss
Coss
10
100
1000
10000
100000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C,
Cap
a
c
itan
ce
(p
F)
Capacitance vs Drain to Source Voltage
Transfert Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
Gate Charge vs Gate to Source
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
0
30
60
90
120
150
180
Gate Charge (nC)
V
GS
,Gate
to
So
u
rce
V
o
lt
ag
e
ID=21A
TJ=25°C
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