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參數(shù)資料
| 型號(hào)： | APTM50AM38SCT |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-10 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | APTM50AM38SCT |
APTM50AM38SCT
A
PT
M
50A
M
38S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
40
60
80
100
120
140
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s
)
VDS=333V
RG=2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
40
60
80
100
120
140
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=2
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
20
30
40
50
60
70
80
ID, Drain Current (A)
F
req
ue
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=2
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
20
40
60
80
100
120
140
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=2
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=90A
TJ=125°C
L=100H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50AM38SCT | 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50HM35FG | 99 A, 500 V, 0.039 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50HM38F | 90 A, 500 V, 0.038 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50HM38F | 90 A, 500 V, 0.038 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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