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參數(shù)資料
| 型號(hào)： | APTM50AM24S |
| 元件分類： | JFETs |
| 英文描述： | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 296K |
| 代理商： | APTM50AM24S |
APTM50AM24S
A
P
T
M
50A
M
24S
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1.5mA
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
500
A
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
3
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 75A
24
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
19.6
Coss
Output Capacitance
4.2
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.3
nF
Qg
Total gate Charge
434
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 150A
216
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
17
Td(off)
Turn-off Delay Time
50
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 150A
RG = 0.8
41
ns
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
120
A
IF = 120A
1.6
1.8
IF = 240A
1.9
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
IF = 120A
VR = 400V
di/dt = 400A/s
Tj = 125°C
170
ns
Tj = 25°C
440
Qrr
Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt = 400A/s
Tj = 125°C
1840
nC
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相關(guān)代理商/技術(shù)參數(shù) |
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| APTM50AM24SC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Series & parallel diodes MOSFET Power Module |
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| APTM50AM24SG | 功能描述:PWR MODULE MOSFET 500V 150A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50AM25FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
| APTM50AM25FTG | 功能描述:MOSFET MODULE PHASE LEG LP8 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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