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參數(shù)資料
| 型號： | APTM20UM03F-ALN |
| 元件分類： | JFETs |
| 英文描述： | 580 A, 200 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 299K |
| 代理商： | APTM20UM03F-ALN |
APTM20UM03F-AlN
A
P
T
M
20U
M
03F
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 2mA
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
500
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
3000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 290A
3
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 15mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
43.3
Coss
Output Capacitance
13.9
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.87
nF
Qg
Total gate Charge
840
Qgs
Gate – Source Charge
318
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 580A
402
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 580A
RG = 0.8
116
ns
Eon
Turn-on Switching Energy
5
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 580A, RG = 0.8
5.6
mJ
Eon
Turn-on Switching Energy
5.6
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 580A, RG = 0.8
5.9
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
580
IS
Continuous Source current
(Body diode)
Tc = 80°C
434
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 580A
1.3
V
dv/dt
Peak Diode Recovery
8
V/ns
Tj = 25°C
230
trr
Reverse Recovery Time
IS = - 580A
VR = 500V
diS/dt = 600A/s
Tj = 125°C
450
ns
Tj = 25°C
5.4
Qrr
Reverse Recovery Charge
IS = - 580A
VR = 500V
diS/dt = 600A/s
Tj = 125°C
20.4
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 580A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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