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參數資料
| 型號： | APTM20DUM04 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 372 A, 200 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 284K |
| 代理商： | APTM20DUM04 |
APTM20DUM04
A
PT
M
20D
U
M
04
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
pe
da
nc
e
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
VGS=15V
9V
0
200
400
600
800
1000
1200
1400
0
4
8
12
16
20
24
28
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
200
400
600
800
1000
1200
01
23
45
67
89 10
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
0
100
200
300
400
500
600
ID, Drain Current (A)
R
D
S
(on)
D
rai
n
t
o
S
o
ur
c
eO
N
R
e
si
st
a
n
c
e
Normalized to
VGS=10V @ 186A
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTM20DUM04G | 功能描述:MOSFET MOD DUAL COM SRC 200V SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM20DUM05 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
| APTM20DUM05G | 功能描述:MOSFET MOD DUAL COMMON SRC SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM20DUM05T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
| APTM20DUM05TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP8 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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