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參數(shù)資料
| 型號(hào)： | APTM20AM08FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 295K |
| 代理商： | APTM20AM08FT |
APTM20AM08FT
A
PT
M
20A
M
08F
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
375
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
1500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 104A
8
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14.4
Coss
Output Capacitance
4.66
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.29
nF
Qg
Total gate Charge
280
Qgs
Gate – Source Charge
106
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 208A
134
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 208A
RG = 2.5
W
116
ns
Eon
Turn-on Switching Energy
u
1698
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5
1858
J
Eon
Turn-on Switching Energy
u
1872
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5
1972
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
208
IS
Continuous Source current
(Body diode)
Tc = 80°C
155
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 208A
1.3
V
dv/dt
Peak Diode Recovery
w
5
V/ns
Tj = 25°C
230
trr
Reverse Recovery Time
IS = - 208A
VR = 133V
diS/dt = 200A/s
Tj = 125°C
450
ns
Tj = 25°C
1.8
Qrr
Reverse Recovery Charge
IS = - 208A
VR = 133V
diS/dt = 200A/s
Tj = 125°C
6.8
C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
- 208A
di/dt
700A/s
VR
VDSS
Tj
150°C
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