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參數(shù)資料
| 型號(hào)： | APTM20AM06S |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 300 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 291K |
| 代理商： | APTM20AM06S |
APTM20AM06S
A
PT
M
20A
M
06S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6- 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
100 150 200 250 300 350 400 450 500
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=133V
RG=0.8
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
100 150 200 250 300 350 400 450 500
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=133V
RG=0.8
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
500
1000
1500
2000
2500
3000
3500
4000
100 150 200 250 300 350 400 450 500
ID, Drain Current (A)
E
on
an
d
E
of
f(J
)
VDS=133V
RG=0.8
TJ=125°C
L=100H
Eon
Eoff
1000
2000
3000
4000
5000
6000
0246
8
10
Gate Resistance (Ohms)
Sw
it
c
h
in
g
En
e
rg
y
(
J)
Switching Energy vs Gate Resistance
VDS=133V
ID=300A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
30 60 90 120 150 180 210 240 270
ID, Drain Current (A)
F
req
u
e
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=0.8
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
10000
0.30.5 0.70.9 1.11.3 1.51.7 1.9
VSD, Source to Drain Voltage (V)
I DR
,Re
ve
rs
e
Dra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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