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參數(shù)資料
| 型號(hào)： | APTM120UM70F-ALN |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | APTM120UM70F-ALN |
APTM120UM70F-AlN
A
P
T
M
120U
M
70F
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
60
90
120 150 180 210 240 270
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=0.8
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
60
90
120 150 180 210 240 270
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=0.8
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
20
24
60
90 120 150 180 210 240 270
ID, Drain Current (A)
Sw
it
ch
in
gEne
rgy
(m
J)
VDS=800V
RG=0.8
TJ=125°C
L=100H
Eon
Eoff
6
12
18
24
30
36
01
23
45
6
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=171A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
40
60
80
100
120
140
160
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=0.8
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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