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參數(shù)資料
| 型號(hào)： | APTM120U10SA |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 293K |
| 代理商： | APTM120U10SA |
APTM120U10SA
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120U
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2005
APT website – http://www.advancedpower.com
3 – 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
180
A
IF = 180A
2.5
3
IF = 360A
3
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
IF = 180A
VR = 800V
di/dt = 600A/s
Tj = 125°C
350
ns
Tj = 25°C
1.7
Qrr
Reverse Recovery Charge
IF = 180A
VR = 800V
di/dt = 600A/s
Tj = 125°C
8.7
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.038
Series diode
0.46
RthJC
Junction to Case
Parallel diode
0.32
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
SP6 Package outline (dimensions in mm)
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