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參數(shù)資料
| 型號： | APTM120SK68T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 1200 V, 0.816 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 146K |
| 代理商： | APTM120SK68T1G |
APTM120SK68T1G
APT
M
120SK68T
1G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
4 – 5
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
5
10
15
20
25
30
35
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VGS=10V
Low Voltage Output Characteristics
4.5V
5V
0
5
10
15
20
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
TJ=125°C
VGS=6, 7,8 & 9V
Normalized RDS(on) vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
Drai
n
to
S
o
urce
ON
re
si
stan
ce
VGS=10V
ID=12A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
5
10
15
20
01
234
56
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5
duty cycle
Ciss
Crss
Coss
10
100
1000
10000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
0
40
80
120
160
200
240
280
Gate Charge (nC)
V
GS
,G
a
te
to
Sour
c
e
Volt
a
g
e
ID=12A
TJ=25°C
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