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參數(shù)資料
| 型號： | APTM120DA29T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 312K |
| 代理商： | APTM120DA29T |
APTM120DA29T
AP
T
M
12
0DA2
9T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
3 – 6
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.16
RthJC
Junction to Case
Diode
0.9
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
B 25/85
T25 = 298.16 K
4080
K
=
T
B
R
T
1
exp
25
85
/
25
Package outline
T: Thermistor temperature
RT: Thermistor value at T
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PDF描述 |
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| APTM120DA29T | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DA30CT1G | 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DA30T1G | 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DSK57T3 | 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120DSK57T3 | 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120DA29TG | 功能描述:MOSFET N-CH 1200V 34A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120DA30CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTM120DA30T1G | 功能描述:MOSFET N-CH 1200V 31A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120DA56T1G | 功能描述:MOSFET N-CH 1200V 18A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM120DA68T1G | 功能描述:MOSFET N-CH 1200V 15A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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