參數(shù)資料
型號: APTM120A20S
元件分類: JFETs
英文描述: 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-7
文件頁數(shù): 2/6頁
文件大?。?/td> 301K
代理商: APTM120A20S
APTM120A20S
A
P
T
M
120A
20S
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1.5mA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
1.5
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
6
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25A
200
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±450
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
15.2
Coss
Output Capacitance
2.2
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
600
Qgs
Gate – Source Charge
84
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 50A
390
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
68
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 50A
RG =0.8
36
ns
Eon
Turn-on Switching Energy
2.79
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8
0.6
mJ
Eon
Turn-on Switching Energy
5.6
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8
0.81
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
200
V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60A
1.1
1.15
IF = 120A
1.4
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
48
ns
Tj = 25°C
66
Qrr
Reverse Recovery Charge
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
300
nC
相關PDF資料
PDF描述
APTM120A20S 50 A, 1200 V, 0.2 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120SK56T1G 18 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120U10SA 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120U10SA 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM20AM05FG 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
APTM120A20SG 功能描述:MOSFET MOD PHASE LEG SER/PAR SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTM120A29FT 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase Leg MOSFET Power Module
APTM120A29FTG 功能描述:MOSFET MODULE PHASE LEG SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTM120A65FT1G 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTM120A80FT1G 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*