參數(shù)資料
型號(hào)： APTM100H45STG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 18 A, 1000 V, 0.54 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP4, 14 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 0K
代理商： APTM100H45STG
APTM100H45STG
A
P
T
M
100H
45S
T
G
–
R
ev
3
J
ul
y,
2006
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 9A
450
540
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4350
Coss
Output Capacitance
715
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
154
Qgs
Gate – Source Charge
26
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 18A
97
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
121
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5
35
ns
Eon
Turn-on Switching Energy
639
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
380
J
Eon
Turn-on Switching Energy
1046
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
451
J
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
150
nC
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