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參數(shù)資料
| 型號(hào)： | APTM100H45FT3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 320K |
| 代理商： | APTM100H45FT3 |
APTM100H45FT3
A
P
T
M
100H
45F
T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
4 –
6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
10
20
30
40
50
60
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15&8V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
80
01
234
567
89 10
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10203040
50
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
to
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 9A
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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