參數(shù)資料
型號: APTGT150SK60T1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 225 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 273K
代理商: APTGT150SK60T1G
APTGT150SK60T1G
APTGT150SK
60T1G
Re
v0
Au
gus
t,2007
www.microsemi.com
1 – 5
7
CR1
CR2
8
12
4
3
NTC
12
56
Q1
11
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
225 *
IC
Continuous Collector Current
TC = 80°C
150 *
ICM
Pulsed Collector Current
TC = 25°C
350
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
480
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
300A @ 550V
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Buck chopper
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 150A* @ Tc = 80°C
相關PDF資料
PDF描述
APTGT150TA60P 225 A, 600 V, N-CHANNEL IGBT
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相關代理商/技術參數(shù)
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