參數(shù)資料
型號: APTGS75X170E3
元件分類: IGBT 晶體管
英文描述: 150 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-33
文件頁數(shù): 2/3頁
文件大?。?/td> 210K
代理商: APTGS75X170E3
APTGS75X170E3
A
PT
G
S7
5X
17
0E
3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1700
V
Tj = 25°C
0.03
0.15
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1700V
Tj = 125°C
2
mA
Tj = 25°C
2.7
3.3
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 75A
Tj = 125°C
3.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 3.5 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
5000
pF
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
800
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 75A
RG = 20
30
ns
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
900
Tf
Fall Time
30
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 75A
RG = 20
22
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.2
2.6
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 125°C
2.0
V
Tj = 25°C
3.5
Er
Reverse Recovery Energy
IF = 75A
VR = 900V
di/dt =900A/s Tj = 125°C
6.5
mJ
Tj = 25°C
9
Qrr
Reverse Recovery Charge
IF = 75A
VR = 900V
19
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.2
RthJC
Junction to Case
Diode
0.47
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
相關(guān)PDF資料
PDF描述
APTGS75X170E3 150 A, 1700 V, N-CHANNEL IGBT
APTGT100A170T 150 A, 1700 V, N-CHANNEL IGBT
APTGT100A170T 150 A, 1700 V, N-CHANNEL IGBT
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