參數(shù)資料
型號(hào): APTGF350DA60
元件分類: IGBT 晶體管
英文描述: 430 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-5
文件頁數(shù): 2/6頁
文件大?。?/td> 289K
代理商: APTGF350DA60
APTGF350DA60
A
PT
G
F3
50D
A
60
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 200A
600
V
Tj = 25°C
200
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
4000
A
Tj = 25°C
2.0
2.5
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 360A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 4mA
3
5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
17.2
Coes
Output Capacitance
1.88
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
1.6
nF
Qg
Total gate Charge
1320
Qge
Gate – Emitter Charge
1160
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 360A
800
nC
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
u
13.5
Eoff
Turn-off Switching Energy
v
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25
W
11.5
mJ
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
u
17.2
Eoff
Turn-off Switching Energy
v
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25
W
14
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
400
A
IF = 400A
1.6
1.8
IF = 800A
1.9
VF
Diode Forward Voltage
IF = 400A
Tj = 125°C
1.4
V
Tj = 25°C
180
trr
Reverse Recovery Time
IF = 400A
VR = 400V
di/dt =800A/s
Tj = 125°C
220
ns
Tj = 25°C
1560
Qrr
Reverse Recovery Charge
IF = 400A
VR = 400V
di/dt =800A/s
Tj = 100°C
5800
nC
u Eon includes diode reverse recovery
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