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參數(shù)資料
| 型號(hào)： | APTGF200U120DG |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 275 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, MODULE-5 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | APTGF200U120DG |
APTGF200U120DG
A
P
T
G
F
200
U
120D
G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
5 – 6
VGE = 15V
25
30
35
40
45
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
td
(on)
,Tur
n-
O
n
D
el
ay
Ti
m
e(
n
s
)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 1.2
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td
(o
ff)
,T
u
rn
-O
ff
D
e
la
yT
im
e
(n
s)
VCE = 600V
RG = 1.2
VGE=15V
20
60
100
140
180
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
tr
,R
ise
T
im
e(n
s
)
Current Rise Time vs Collector Current
VCE = 600V
RG = 1.2
TJ = 25°C
TJ = 125°C
20
30
40
50
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
tf
,F
all
T
im
e
(n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 1.2
TJ=125°C,
VGE=15V
0
20
40
60
80
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
o
n,
Tur
n-
O
n
E
n
er
gy
Los
s
(m
J)
VCE = 600V
RG = 1.2
TJ = 125°C
0
8
16
24
32
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
E
o
ff
,T
u
rn
-o
ff
E
n
er
g
y
L
o
ss
(m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
R
G = 1.2
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
40
48
56
02.557.5
10
12.5
Gate Resistance (Ohms)
S
w
it
ch
ing
E
n
er
gy
Los
s
es
(
m
J
)
Switching Energy Losses vs Gate Resistance
VCE = 600V
V
GE = 15V
TJ= 125°C
Cies
Cres
Coes
100
1000
10000
100000
0
1020304050
C
,C
apa
c
it
anc
e(
pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
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