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參數(shù)資料
| 型號： | APTGF200U120D |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 275 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 290K |
| 代理商： | APTGF200U120D |
APTGF200U120D
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APT website – http://www.advancedpower.com
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Coes
100
1000
10000
100000
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1020304050
C
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a
pa
ci
ta
nc
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(pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0
100
200
300
400
500
600
700
0
400
800
1200
I C
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Minimum Switching Safe Operating Area
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
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Rectangular Pulse Duration (Seconds)
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Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
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ZCS
0
20
40
60
80
100
120
20
60
100
140
180
220
IC, Collector Current (A)
Operating Frequency vs Collector Current
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VCE = 600V
D = 50%
RG = 1.2
TJ = 125°C
TC = 75°C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF200U120DG | 功能描述:IGBT 1200V 275A 1136W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF200U120T1G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF200U60D4 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module |
| APTGF20X60BTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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