參數(shù)資料
型號(hào)： APTGF15H120T1G
廠(chǎng)商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： IGBT 晶體管
英文描述： 25 A, 1200 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, SP1, 12 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 318K
代理商： APTGF15H120T1G
APTGF15H120T1G
APTG
F15H120T1G
–
R
ev
0
A
ugus
t,200
7
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
A
Tj = 25°C
2.5
3.2
3.7
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 15A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1000
Coes
Output Capacitance
150
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
70
pF
Qg
Total gate Charge
99
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 600V
IC =15A
70
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
315
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33
30
ns
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
356
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
2
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 15A
RG = 33
Tj = 125°C
1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
15
A
IF = 15A
2.8
3.3
IF = 30A
3.4
VF
Diode Forward Voltage
IF = 15A
Tj = 125°C
2.4
V
Tj = 25°C
240
trr
Reverse Recovery Time
Tj = 125°C
290
ns
Tj = 25°C
260
Qrr
Reverse Recovery Charge
IF = 15A
VR = 800V
di/dt =200A/s
Tj = 125°C
960
nC
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