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參數(shù)資料
| 型號： | APTC80SK15T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 315K |
| 代理商： | APTC80SK15T1G |
APTC80SK15T1G
APT
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80SK15T1G
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www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
180
Qgs
Gate – Source Charge
22
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
90
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5
35
ns
Eon
Turn-on Switching Energy
486
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
278
J
Eon
Turn-on Switching Energy
850
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
342
J
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
2.6
3.1
IF = 60A
3.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
Tj = 25°C
300
trr
Reverse Recovery Time
Tj = 125°C
380
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/s
Tj = 125°C
1700
nC
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