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參數(shù)資料
| 型號： | APTC80A10SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 800 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 312K |
| 代理商： | APTC80A10SCT |
APTC80A10SCT
A
PT
C
80A
10S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
4 – 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
Th
e
rm
al
Im
p
e
d
a
n
c
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
20
40
60
80
100
120
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
30
60
90
120
150
0123
45678
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
102030405060 708090
ID, Drain Current (A)
R
DS
(o
n)
D
rai
n
t
o
So
ur
ce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 21A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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