參數(shù)資料
型號(hào)： APTC60HM45T1G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 49 A, 600 V, 0.045 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 315K
代理商： APTC60HM45T1G
APTC60HM45T1G
APT
C
60HM45T1G
–
Re
v0
Augus
t,2007
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 24.5A
40
45
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7.2
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
8.5
nF
Qg
Total gate Charge
150
Qgs
Gate – Source Charge
34
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 49A
51
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
45
ns
Eon
Turn-on Switching Energy
675
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
520
J
Eon
Turn-on Switching Energy
1100
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
635
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
49
IS
Continuous Source current
(Body diode)
Tc = 80°C
38
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 49A
1.2
V
dv/dt
Peak Diode Recovery
4
V/ns
trr
Reverse Recovery Time
Tj = 25°C
600
ns
Qrr
Reverse Recovery Charge
IS = - 49A
VR = 350V
diS/dt = 100A/s
Tj = 25°C
17
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 49A
di/dt
≤ 100A/s
VR ≤ VDSS
Tj ≤ 150°C
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