參數(shù)資料
型號: APTC60DHM24T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 95 A, 600 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 240K
代理商: APTC60DHM24T3G
APTC60DHM24T3G
APT
C
60DHM
24T3G
Rev
1
August,
2009
www.microsemi.com
1- 7
All multiple inputs and outputs must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
32
4
16
Q4
CR3
3
13
R1
31
7
14
8
19
30
29
22
Q1
18
CR2
23
15
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
Example: 13/14 ; 29/30 ; 22/23…
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
95
ID
Continuous Drain Current
Tc = 80°C
70
IDM
Pulsed Drain current
260
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
24
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
462
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
RoHS compliant
Asymmetrical Bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
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PDF描述
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