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參數(shù)資料
| 型號(hào)： | APTC60DAM35T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 312K |
| 代理商： | APTC60DAM35T1G |
APTC60DAM35T1G
APT
C
60DA
M
35T
1G
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0
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st
,2
007
www.microsemi.com
6 – 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Re
ver
se
Dr
ai
n
Cu
rr
ent
(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
20
40
60
80
100 120
ID, Drain Current (A)
t d(
o
n
)an
d
t
d(of
f)(n
s)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
20
40
60
80
100
120
ID, Drain Current (A)
t r
an
d
t
f(ns)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
120
ID, Drain Current (A)
Sw
it
ch
ing
En
er
gy
(
m
J)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
Swi
tchi
n
g
E
n
er
gy
(m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=72A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
Fr
eque
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=2.5
TJ=125°C
TC=75°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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