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參數(shù)資料
| 型號： | APT94N65B2C3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | APT94N65B2C3 |
050-8069
Rev
B
3-2009
DYNAMIC CHARACTERISTICS
APT94N65B2C3(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 3 (V
GS = 0V, IS = -94A)
Peak Diode Recovery dv/
dt
6
Reverse Recovery Time
(I
S = -94A,
di/
dt = 100A/μs)
Reverse Recovery Charge
(I
S = -94A,
di/
dt = 100A/μs)
Peak Recovery Current
(I
S = -94A,
di/
dt = 100A/μs)
Symbol
I
S
I
SM
V
SD
dv/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
47
141
0.9
1.2
50
960
1271
31
43
58
56
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.15
31
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as P
AV = E
AR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specications and information contained herein.
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 4
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 5
Turn-off Switching Energy
Turn-on Switching Energy 5
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 94A @ 25°C
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 94A @ 25°C
R
G = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 94A, RG = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 94A, RG = 4.3Ω
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
MIN
TYP
MAX
13940
5200
229
580
72
234
32
59
498
167
2684
4448
3391
5082
UNIT
pF
nC
ns
μJ
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
10-5
10-4
10-3
10-2
0.1
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT94N65B2C3_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT94N65B2C3G | 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT94N65B2C6 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | 制造商:Microsemi Corporation 功能描述:IGBT 650V 208A 892W T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT95GR65JDU60 | 功能描述:IGBT NPT 650V 135A 446W Chassis Mount SOT-227 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):上次購買時(shí)間 IGBT 類型:NPT 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:135A 脈沖電流 - 集電極 (Icm):380A 不同?Vge，Ic 時(shí)的?Vce（on）:2.4V @ 15V，95A 功率 - 最大值:446W 開關(guān)能量:* 輸入類型:標(biāo)準(zhǔn) 柵極電荷:420nC 25°C 時(shí) Td（開/關(guān)）值:29ns/226ns 測試條件:433V，95A，4.3 歐姆，15V 反向恢復(fù)時(shí)間（trr）:- 封裝/外殼:SOT-227-4，miniBLOC 安裝類型:底座安裝 供應(yīng)商器件封裝:SOT-227 標(biāo)準(zhǔn)包裝:1 |
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