參數(shù)資料
型號(hào)： APT77H60J
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 77 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, ISOTOP, 4 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 273K
代理商： APT77H60J
Static Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 1.86mH, RG = 2.2, IAS = 60A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -2.32E-7/VDS^2 + 9.75E-8/VDS + 3.64E-10.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
G
D
S
Unit
V
V/°C
V
mV/°C
A
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
C
A
V/ns
Min
Typ
Max
600
0.57
0.050
0.065
3
4
5
-10
100
1000
±100
Min
Typ
Max
115
24000
245
2200
1170
605
600
130
250
135
155
410
125
Min
Typ
Max
77
445
1.0
260
300
460
550
2.08
5.54
11.6
17.8
30
Test Conditions
V
GS = 0V, ID = 250A
Reference to 25°C, I
D = 250A
V
GS = 10V, ID = 60A
V
GS = VDS, ID = 5mA
V
DS = 600V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 60A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 400V
V
GS = 0 to 10V, ID = 60A,
V
DS = 300V
Resistive Switching
V
DD = 400V, ID = 60A
R
G = 2.2
6
, V
GG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 60A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
I
SD = 60A
3
T
J = 25°C
di
SD/dt = 100A/s
T
J = 125°C
V
DD = 100V
T
J = 25°C
T
J = 125°C
I
SD ≤ 60A, di/dt ≤1000A/s, VDD = 400V,
T
J = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
050-8152
Rev
A
6-2007
APT77H60J
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