參數(shù)資料
型號: APT60GF60JU3
廠商: MICROSEMI CORP
元件分類: IGBT 晶體管
英文描述: 93 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, ISOTOP-4
文件頁數(shù): 1/8頁
文件大?。?/td> 516K
代理商: APT60GF60JU3
APT60GF60JU3
A
P
T
60G
F
60J
U
3–
R
ev
1
J
une
,2006
www.microsemi.com
1 - 8
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
IC1
TC= 25°C
93
IC2
Continuous Collector Current
TC= 95°C
60
ICM
Pulsed Collector Current
TC= 25°C
360
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
378
W
ILM
RBSOA clamped Inductive load Current RG=11
TC= 25°C
360
A
IFAV
Maximum Average Forward Current
Duty cycle=0.5
TC = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C
A
E
G
VCES = 600V
IC = 60A @ Tc = 95°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP Buck chopper
NPT IGBT
A
C
G
E
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