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參數(shù)資料
| 型號(hào)： | APT6045CVR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 11.4 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | APT6045CVR |
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
R
G = 1.6
MIN
TYP
MAX
2600
3120
305
425
125
180
115
170
15
25
52
75
10
20
918
38
50
612
UNIT
pF
nC
ns
APT6045CVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (I
S = -ID[Cont.], dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID[Cont.], dlS/dt = 100A/s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
11.4
45.6
1.3
400
6
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 14.77mH, RG = 25, Peak IL = 11.4A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.83
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
050-5831
Rev
B
10-2004
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6045HN | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15.5A I(D) | TO-258ISO |
| APT6045SVFR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVFRG | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6060AN | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11.5A I(D) | TO-3 |
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