- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57948 > APT6015JVFR (MICROSEMI POWER PRODUCTS GROUP) 35 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT6015JVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 136K |
| 代理商： | APT6015JVFR |
DYNAMIC CHARACTERISTICS
APT6015JVFR
050-7264
Rev
A
2-2003
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting T
j = +25°C, L = 4.08mH, RG = 25
W
, Peak I
L = 35A
2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -35A)
Peak Diode Recovery dv/
dt
5
Reverse Recovery Time
(I
S = -35A,
di/
dt = 100A/μs)
Reverse Recovery Charge
(I
S = -35A,
di/
dt = 100A/μs)
Peak Recovery Current
(I
S = -35A,
di/
dt = 100A/μs)
Symbol
I
S
I
SM
V
SD
dv/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 35A @ 25°C
V
GS = 15V
V
DD = 300V
I
D = 35A @ 25°C
R
G = 1.6
W
MIN
TYP
MAX
7500
9000
900
1260
320
480
315
475
45
70
125
190
15
30
13
26
45
70
5
10
UNIT
pF
nC
ns
MIN
TYP
MAX
35
140
1.3
15
T
j = 25°C
250
T
j = 125°C
500
T
j = 25°C
1.6
T
j = 125°C
5.5
T
j = 25°C
15
T
j = 125°C
27
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θJA
MIN
TYP
MAX
0.28
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6017WVR | 31.5 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA |
| APT6027HVR | 20 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT6030HJN | 23 A, 600 V, 0.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APT6030SN | 23 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6032HLL | 16 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6015JVR | 功能描述:MOSFET N-CH 600V 35A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT6015LVFR | 制造商:Microsemi Corporation 功能描述:MOSFET Transistor, N-Channel, TO-264 |
| APT6015LVFRG | 功能描述:MOSFET N-CH 600V 38A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT6015LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6015LVRG | 功能描述:MOSFET N-CH 600V 38A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。