- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57948 > APT50M60JN 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50M60JN |
| 元件分類： | JFETs |
| 英文描述： | 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 60K |
| 代理商： | APT50M60JN |
MIN
TYP
MAX
APT50M60JN
71
APT50M60JN
284
1.8
650
1300
19
38
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
R
G
= 0.6
MIN
TYP
MAX
11640
14000
2230
3120
800
1200
475
710
68
100
246
370
22
45
30
60
66
100
13
25
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
C
Characteristic / Test Conditions
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
UNIT
nH
Volts
pF
in-lbs
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
MIN
TYP
MAX
3
5
2500
70
13
APT50M60JN
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
050-5038
Rev
E
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
SINGLE PULSE
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.01
0.02
0.05
0.1
0.2
D=0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50M75JLLU3 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M80B2FLC | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M80LFLC | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85JVR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50N60JCU3 | 52 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M60JNF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 71A I(D) |
| APT50M60JVFR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT50M60JVR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT50M60L2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60L2VFR_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V㈢ FREDFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。