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參數(shù)資料
| 型號： | APT50M38JLL |
| 元件分類： | JFETs |
| 英文描述： | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | APT50M38JLL |
APT50M38JLL
050-7020
Rev
D
4-2004
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
500
0
10
20
30
40
50
0
50
100 150 200 250 300 350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
352
100
10
1
16
12
8
4
0
40,000
10,000
1,000
100
10
400
100
10
1
Crss
Coss
Ciss
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
VDS=250V
VDS=100V
VDS=400V
I
D = 88A
1mS
100S
TJ =+150°C
TJ =+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
20
40
60
80
100
120
140
20
40
60
80
100
120
140
20
40
60
80
100
120
140
0
5
10
15
20
V
DD = 333V
I
D = 88A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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