參數(shù)資料
型號(hào)： APT50GS60BRDL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 93 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247, 3 PIN
文件頁數(shù)： 7/8頁
文件大小： 257K
代理商： APT50GS60BRDL
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 124°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 50A
Forward Voltage
I
F = 100A
I
F = 50A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.25
1.6
2.0
1.25
APT50GS60BRDL(G)
50
150
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
52
-
399
-
1498
-
9
-
649
-
3734
-
13
-
284
-
5134
-
34
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 50A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F =50A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 50A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
DYNAMIC CHARACTERISTICS
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
0.316
0.312
0.00467
0.1483
APT50GS60BRDL(G)
052-6352
Rev
A
7-2008
相關(guān)PDF資料
PDF描述
APT50GT60BRDQ1G 110 A, 600 V, N-CHANNEL IGBT, TO-247
APT50GT60BRDQ1G 110 A, 600 V, N-CHANNEL IGBT, TO-247
APT50GT60BRDQ1 110 A, 600 V, N-CHANNEL IGBT, TO-247
APT50GT60BRDQ2 110 A, 600 V, N-CHANNEL IGBT, TO-247
APT50M60JVR 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GS60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT50GS60BRDQ2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT50GS60BRDQ2G 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT50GS60BRG 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT50GS60SR 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT
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