參數資料
型號: APT50GF60JU3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 75 A, 600 V, N-CHANNEL IGBT
封裝: ISOTOP-4
文件頁數: 2/8頁
文件大?。?/td> 471K
代理商: APT50GF60JU3
APT50GF60JU3
A
PT
50G
F60J
U
3–
R
ev
0
A
pr
il
,2004
APT website – http://www.advancedpower.com
2- 8
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
600
V
Tj = 25°C
40
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1000
A
Tj = 25°C
2.1
2.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.2
2.8
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 700A
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2250
Coes
Output Capacitance
255
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
155
pF
Qg
Total gate Charge
175
Qge
Gate – Emitter Charge
18
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 50A
100
nC
Td(on)
Turn-on Delay Time
29
Tr
Rise Time
118
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
Resistive Switching (25°C)
VGE = 15V
VBus = 300V
IC = 50A
RG = 10
W
190
ns
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
80
Td(off)
Turn-off Delay Time
240
Tf
Fall Time
43
ns
Ets
Total switching Losses
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 10
W
3.6
mJ
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
75
Td(off)
Turn-off Delay Time
265
Tf
Fall Time
185
ns
Eon
Turn-on Switching Energy
1.8
Eoff
Turn-off Switching Energy
2.4
Ets
Total switching Losses
Inductive Switching (150°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 10
W
4.2
mJ
相關PDF資料
PDF描述
APT50GF60JU3 75 A, 600 V, N-CHANNEL IGBT
APT50GN60BDQ2 107 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GN60BDQ2 107 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GN60BDQ2G 107 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GS60BRDL 93 A, 600 V, N-CHANNEL IGBT, TO-247AD
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