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參數(shù)資料
| 型號： | APT5010JVRU3 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | JFETs |
| 英文描述： | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 407K |
| 代理商： | APT5010JVRU3 |
APT5010JVRU3
A
P
T
5010J
V
R
U
3–
R
ev
1
J
une
,2006
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 22A
100
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7410
Coss
Output Capacitance
1050
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
390
pF
Qg
Total gate Charge
312
Qgs
Gate – Source Charge
37
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 44A @ TJ=25°C
127
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
16
Td(off)
Turn-off Delay Time
54
Tf
Fall Time
VGS = 15V
VBus = 250V
ID = 44A @ TJ=25°C
RG = 0.6
5
ns
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
VR = 600V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
44
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
23
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
4
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
8
A
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
700
nC
trr
Reverse Recovery Time
70
ns
Qrr
Reverse Recovery Charge
1300
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/s
Tj = 125°C
30
A
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT5010LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5010LFLLG | 功能描述:MOSFET N-CH 500V 46A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5010LLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5010LLL | 制造商:APT 功能描述: |
| APT5010LLLG | 功能描述:MOSFET N-CH 500V 46A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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